In logic devices such as finFETs (field-effect transistors), metal gate parasitic capacitance can negatively impact electrical performance. One way to reduce this parasitic capacitance is to optimize ...

The IC industry is headed toward a new era of scaling–and uncertainty–as chip makers race to develop the key building blocks for the next-generation transistor: high-k dielectrics and metal gates.

On Nov. 12, Intel shipped the first 45-nanometer microprocessors using high-k metal-gate technology. Whether to underscore the significance of the event or to reinforce that his famous law remains on ...