EMI filters reduce electromagnetic interference while ensuring signal integrity, designed for high-reliability applications ...
Drone delivery faces challenges in air traffic control, safety, regulations, and public acceptance. Despite hurdles, ...
Qorvo enables seamless 5G connectivity through advanced RF solutions, supporting applications from small cells to fixed ...
JFW has added two new 75-Ohm matrix switches. One is a non-blocking type featuring switches on both sides while the other, a non-blocking type, has switches on one half. Both matrix switches feature ...
An excellent alternative to traveling wave tube amplifiers, Qorvo’s Spatium QPB1024 is a solid state, spatialcombining amplifier with an operating range of 8.0 – 11.0 GHz while achieving greater than ...
OceanSound Partners (“OceanSound”), a growth-oriented private equity firm that invests in technology and technology-enabled services businesses serving government and highly-regulated enterprise ...
The AMP2065G-LC-2KW Solid State High Power Amplifier is designed for replacing aging TWT technology. A broadband rugged EMC Class A/AB linear Solid-State design for all modulations & industry ...
Recently, Quectel Communications, a leading global provider of total IoT solutions, announced the launch of eight new high-performance antennas to further enrich its antenna product lineup and better ...
Nokia today announced that it has been selected by Chunghwa Telecom (CHT), in a one-year extension deal that will modernize its 5G network across the central and southern regions of Taiwan.
Gapwaves, a world leader in innovative waveguide technology, and Valeo, a French world leader in ADAS systems, have entered into an agreement regarding the development and large-scale serial ...
An excellent alternative to traveling wave tube amplifiers, Qorvo’s Spatium™ QPB0220N is a solid state, spatial combining amplifier with an operating range of 2–18 GHz. With its maximum performance in ...
The UJ4C075023L8S is a G4 SiC FET based on a unique ‘cascode’ circuit configuration where a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s ...